Defects in III-nitride microdisk cavities

Optical modes within III-nitride multiple quantum well microdisk cavities

Size dependence of III-nitride microdisk light-emitting diode characteristics

Distinctive signature of indium gallium nitride quantum dot lasing in microdisk cavities.

Low-threshold lasers realized within compact, high-quality optical cavities enable a variety of nanophotonics applications. Gallium nitride materials containing indium gallium nitride (InGaN) quantum dots and quantum wells offer an outstanding platform to study light-matter interactions and realize practical devices such as efficient light-emitting diodes and nanolasers. Despite progress in the...

Role of Defects in III-Nitride Based Electronics

The LDRD entitled “Role of Defects in 111-Nitrde Based Devices” is aimed to place Sandia National Laboratory at the forefront of the field of GaN materials and devices by establishing a scientific foundation in areas such as material growth, defect characterization/modeling, and processing (metalization and etching) chemistry. In this SAND report we summarize our studies such as i) the MOCVD gr...

Deep-UV nitride-on-silicon microdisk lasers

Deep ultra-violet semiconductor lasers have numerous applications for optical storage and biochemistry. Many strategies based on nitride heterostructures and adapted substrates have been investigated to develop efficient active layers in this spectral range, starting with AlGaN quantum wells on AlN substrates and more recently sapphire and SiC substrates. Here we report an efficient and simple ...